1.
(a) Sketch a p-MOSFET of the enhancement type.
(b) Indicate the type and density of carriers in each region.
2.
(a) A current of 1 Ampère flows in an electrolytic cell. In how many seconds will Avogadro's number of electrons pass through the cell?
(b) A plate of area 1m2 is to be covered with a 1 m layer of Zn by electrolytic deposition, using a current of 1 Ampère. Estimate how long the process will take. Find in tables the density (or the lattice constant) of metallic Zinc, and assume that the Zn atoms are deposited as Zn++ ions.
3.
Many night lights and security lamps use a strip of photoconductor to tell when it is dark enough for them to turn on. Design a very simple circuit that will cause a light bulb to turn on in the dark.
4.
Melissinos gives the relation
for the carrier density in n - type semiconductors.(a) Assuming ni=1010 (all densities are in cm-3), plot n as a function of ND-NA in the range from -5ni to 10ni. What is the value of n when ND-NA=1015?
(b) With the same assumptions as in (a), find and plot p. What is p when ND-NA=1015?
(c) Make a combined plot showing n and p over the range of
ND-NA from -10ni to 10ni.